Vertical Cavity Surface Emitting Laser with AlGaInAs/InP Bragg mirrors fabricated for operation at 1.5 μm
نویسندگان
چکیده
The authors present the design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55μm. The device is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows it to select the optimum materials for highly reflective Bragg mirrors. The simulation of the designed VCSEL performance has been carried out by evaluation of the important laser characteristics such as threshold gain, threshold current density and external quantum efficiency.
منابع مشابه
Vertical Cavity Surface Emitting Laser with AlGaInAs/InP Bragg mirrors fabricated for operation at 1.55 μm
The authors present the design and performance of a low threshold selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) fabricated for operation at a wavelength of 1.55μm. The device is based on III-V quaternary semiconductor alloys and is grown by Molecular Beam Epitaxy technique. The theoretical investigation of the optical properties of the compound semiconductor alloys allows ...
متن کاملEffects of Bragg Mirror Interface Grading and Layer Thickness Variations on VCSEL Performance at 1.55μm
A selectively oxidized Vertical Cavity Surface Emitting Laser (VCSEL) has been designed and fabricated for operation at a wavelength of 1.546μm. The lattice matched device structure was grown on an InP substrate using III-V quaternary semiconductor alloys for Bragg mirrors and GaInAsP-based unstrained Multi-Quantum Wells (MQW) for the active layer. The mirror reflectivities are 97% for the top ...
متن کاملEffect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL)
Abstract: In this study, the effects of variation of thickness and the number of quantumwells as well as the contact length were investigated. In this paper, a vertical cavity surfaceemitting laser was simulated using of software based on finite element method. Thenumber of quantum wells was changed from 3 to 9 and the results which are related tooutput power, resonance ...
متن کاملDesign and Development of Short and Long Wavelength Infrared Vertical Cavity Surface Emitting Lasers
The design, fabrication and performance of low threshold selectively oxidized infrared vertical cavity surface emitting lasers (VCSELs) for operation at 0.89μm and 1.55μm wavelengths using optimized graded Bragg mirrors, is reported. The devices are based on III-V ternary (AlGaAs/GaAs) and quaternary (AlInGaAs/GaInAsP/InP) graded semiconductor alloys and quantum wells and are grown by Molecular...
متن کاملGrowth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures
We have investigated the regrowth of GaAs/AlAs quarter-wave Bragg reflectors on patterned mesa InP-based quantum well heterostructures that can be fabricated into 1.55 mm vertical cavity surface emitting lasers. It is seen from transmission electron and scanning electron microscopy that the multiple layer GaAs-based mirrors can be grown on InP-based heterostructure mesas of diameters 10–40 mm w...
متن کامل